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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">zldm</journal-id><journal-title-group><journal-title xml:lang="ru">Заводская лаборатория. Диагностика материалов</journal-title><trans-title-group xml:lang="en"><trans-title>Industrial laboratory. Diagnostics of materials</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1028-6861</issn><issn pub-type="epub">2588-0187</issn><publisher><publisher-name>ООО «Издательство «ТЕСТ-ЗЛ»</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.26896/1028-6861-2025-91-8-41-46</article-id><article-id custom-type="elpub" pub-id-type="custom">zldm-2574</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ИССЛЕДОВАНИЕ СТРУКТУРЫ И СВОЙСТВ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>STRUCTURE AND PROPERTIES INVESTIGATION</subject></subj-group></article-categories><title-group><article-title>Исследование электрофизических свойств композитного диэлектрического материала с низкой диэлектрической постоянной</article-title><trans-title-group xml:lang="en"><trans-title>Research of electrophysical properties of composite dielectric material with low permittivity</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Кудрявцева</surname><given-names>Д. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Kudryavtseva</surname><given-names>D. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Дарья Алексеевна Кудрявцева</p><p>197022, г. Санкт-Петербург, ул. Профессора Попова, д. 5, литера Ф</p></bio><bio xml:lang="en"><p>Daria A. Kudryavtseva</p><p>5 lit. F, ul. Prof. Popova, St Petersburg, 197022</p></bio><email xlink:type="simple">dakudryavtseva@etu.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Цымбалюк</surname><given-names>А. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Tsymbalyuk</surname><given-names>A. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Андрей Александрович Цымбалюк</p><p>197022, г. Санкт-Петербург, ул. Профессора Попова, д. 5, литера Ф</p></bio><bio xml:lang="en"><p>Andrey A. Tsymbalyuk</p><p>5 lit. F, ul. Prof. Popova, St Petersburg, 197022</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Комлев</surname><given-names>А. Е.</given-names></name><name name-style="western" xml:lang="en"><surname>Komlev</surname><given-names>A. E.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Андрей Евгеньевич Комлев</p><p>197022, г. Санкт-Петербург, ул. Профессора Попова, д. 5, литера Ф</p></bio><bio xml:lang="en"><p>Andrey E. Komlev</p><p>5 lit. F, ul. Prof. Popova, St Petersburg, 197022</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Алтынников</surname><given-names>А. Г.</given-names></name><name name-style="western" xml:lang="en"><surname>Altynnikov</surname><given-names>A. G.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Андрей Геннадиевич Алтынников</p><p>197022, г. Санкт-Петербург, ул. Профессора Попова, д. 5, литера Ф</p></bio><bio xml:lang="en"><p>Andrey G. Altynnikov</p><p>5 lit. F, ul. Prof. Popova, St Petersburg, 197022</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Платонов</surname><given-names>Р. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Platonov</surname><given-names>R. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Роман Андреевич Платонов</p><p>197022, г. Санкт-Петербург, ул. Профессора Попова, д. 5, литера Ф</p></bio><bio xml:lang="en"><p>Roman A. Platonov</p><p>5 lit. F, ul. Prof. Popova, St Petersburg, 197022</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Гагарин</surname><given-names>А. Г.</given-names></name><name name-style="western" xml:lang="en"><surname>Gagarin</surname><given-names>A. G.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Александр Геннадиевич Гагарин</p><p>197022, г. Санкт-Петербург, ул. Профессора Попова, д. 5, литера Ф</p></bio><bio xml:lang="en"><p>Alexander G. Gagarin</p><p>5 lit. F, ul. Prof. Popova, St Petersburg, 197022</p></bio><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Санкт-Петербургский государственный электротехнический университет «ЛЭТИ» имени В. И. Ульянова (Ленина)</institution><country>Россия</country></aff><aff xml:lang="en"><institution>St. Petersburg Electrotechnical University «LETI»</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2025</year></pub-date><pub-date pub-type="epub"><day>31</day><month>08</month><year>2025</year></pub-date><volume>91</volume><issue>8</issue><fpage>41</fpage><lpage>46</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Кудрявцева Д.А., Цымбалюк А.А., Комлев А.Е., Алтынников А.Г., Платонов Р.А., Гагарин А.Г., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Кудрявцева Д.А., Цымбалюк А.А., Комлев А.Е., Алтынников А.Г., Платонов Р.А., Гагарин А.Г.</copyright-holder><copyright-holder xml:lang="en">Kudryavtseva D.A., Tsymbalyuk A.A., Komlev A.E., Altynnikov A.G., Platonov R.A., Gagarin A.G.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://www.zldm.ru/jour/article/view/2574">https://www.zldm.ru/jour/article/view/2574</self-uri><abstract><p>Активное развитие телекоммуникационных систем, работающих на частотах от 30 ГГц и выше (в том числе систем 5G), требует разработки и создания материалов с диэлектрической постоянной менее 2,2, совместимых с технологией печатных плат. Технологические подходы изготовления таких материалов основаны на формировании воздушных полостей в исходной диэлектрической матрице и требуют контроля их СВЧ-параметров (в первую очередь диэлектрической проницаемости и тангенса угла диэлектрических потерь) в заданном диапазоне частот. В работе представлены результаты исследования электрофизических свойств композитного диэлектрического материала с низкой диэлектрической постоянной. Герметизированные диэлектрические пластины с заданным распределением воздушных полостей по объему изготавливали с помощью механической перфорации и аддитивной технологии 3D-печати. СВЧ-параметры полученных образцов определяли с помощью разъемного цилиндрического резонатора на частоте ~10 ГГц. Исследовали образцы с минимальным значением диэлектрической проницаемости 1,75. Установлено, что применение аддитивных технологий 3D-печати ввиду целого ряда особенностей приводит к искажению геометрических размеров формирующихся воздушных полостей, что, в свою очередь, влияет на электрофизические свойства образцов. Полученные результаты могут быть использованы при разработке новых СВЧ-материалов.</p></abstract><trans-abstract xml:lang="en"><p>The active development of telecommunication systems operating at frequencies from 30 GHz and above (including 5G systems) requires the development and creation of materials with a dielectric constant of less than 2.2 compatible with printed circuit board technology. Technological approaches to manufacturing such materials are based on the formation of air cavities in the initial dielectric matrix and require control of their microwave parameters (primarily the dielectric constant and the tangent of the dielectric loss angle) in a given frequency range. The paper presents the results of a study of the electrophysical properties of a composite dielectric material with a low dielectric constant. Sealed dielectric plates with a predetermined volume distribution of air cavities were produced using mechanical perforation and additive 3D printing technology. The microwave parameters of the obtained samples were determined using a detachable cylindrical resonator at a frequency of ~10 GHz. Samples with a minimum dielectric constant of 1.75 were examined. It has been established that the use of additive 3D printing technologies, due to several features, leads to a distortion of the geometric dimensions of the forming air cavities, which in turn affects the electrophysical properties of the samples. The results obtained can be used in the development of new microwave materials.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>композитный материал</kwd><kwd>диэлектрик</kwd><kwd>резонансные измерения</kwd><kwd>СВЧ-электроника</kwd><kwd>3D-печать</kwd><kwd>диэлектрическая проницаемость</kwd><kwd>перфорация</kwd></kwd-group><kwd-group xml:lang="en"><kwd>composite material</kwd><kwd>dielectric</kwd><kwd>microwave electronics</kwd><kwd>e-resonance measurements</kwd><kwd>3D-printing</kwd><kwd>dielectric constant</kwd><kwd>perforation</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Tong C. PCB materials and design requirements for 5G systems.— Cham: Springer, 2022. DOI: 10.1007/978-3-031-17207-6</mixed-citation><mixed-citation xml:lang="en">Tong C. PCB materials and design requirements for 5G systems.— Cham: Springer, 2022. 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