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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">zldm</journal-id><journal-title-group><journal-title xml:lang="ru">Заводская лаборатория. Диагностика материалов</journal-title><trans-title-group xml:lang="en"><trans-title>Industrial laboratory. Diagnostics of materials</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1028-6861</issn><issn pub-type="epub">2588-0187</issn><publisher><publisher-name>ООО «Издательство «ТЕСТ-ЗЛ»</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.26896/1028-6861-2026-92-4-50-54</article-id><article-id custom-type="elpub" pub-id-type="custom">zldm-2798</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ФИЗИЧЕСКИЕ МЕТОДЫ ИССЛЕДОВАНИЯ И КОНТРОЛЯ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>PHYSICAL METHODS OF RESEARCH AND MONITORING</subject></subj-group></article-categories><title-group><article-title>Исследование структуры и магнитных свойств толстых пленок BaFe12O19, полученных методом шликерного литья</article-title><trans-title-group xml:lang="en"><trans-title>Research of structure and magnetic properties of thick BaFe12O19 films obtained by slip casting</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Костишин</surname><given-names>В. Г.</given-names></name><name name-style="western" xml:lang="en"><surname>Kostishin</surname><given-names>V. G.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Владимир Григорьевич Костишин</p><p>119049, Москва, Ленинский просп., д. 4, стр. 1</p></bio><bio xml:lang="en"><p>Vladimir G. Kostishin</p><p>4, str. 1, Leninsky prosp., Moscow, 119049</p></bio><email xlink:type="simple">drvgkostishyn@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Сысоев</surname><given-names>М. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Sysoev</surname><given-names>M. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Максим Алексеевич Сысоев</p><p>119049, Москва, Ленинский просп., д. 4, стр. 1</p></bio><bio xml:lang="en"><p>Maksim A. Sysoev</p><p>4, str. 1, Leninsky prosp., Moscow, 119049</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Исаев</surname><given-names>И. М.</given-names></name><name name-style="western" xml:lang="en"><surname>Isaev</surname><given-names>I. M.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Игорь Магомедович Исаев</p><p>119049, Москва, Ленинский просп., д. 4, стр. 1</p></bio><bio xml:lang="en"><p>Igor M. Isaev</p><p>4, str. 1, Leninsky prosp., Moscow, 119049</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Прусаков</surname><given-names>А. Д.</given-names></name><name name-style="western" xml:lang="en"><surname>Prusakov</surname><given-names>A. D.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Алексей Дмитриевич Прусаков</p><p>119049, Москва, Ленинский просп., д. 4, стр. 1</p></bio><bio xml:lang="en"><p>Alexey D. Prusakov</p><p>4, str. 1, Leninsky prosp., Moscow, 119049</p></bio><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Национальный исследовательский технологический университет МИСИС</institution><country>Россия</country></aff><aff xml:lang="en"><institution>National Research Technological University MISIS</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2026</year></pub-date><pub-date pub-type="epub"><day>28</day><month>04</month><year>2026</year></pub-date><volume>92</volume><issue>4</issue><fpage>50</fpage><lpage>54</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Костишин В.Г., Сысоев М.А., Исаев И.М., Прусаков А.Д., 2026</copyright-statement><copyright-year>2026</copyright-year><copyright-holder xml:lang="ru">Костишин В.Г., Сысоев М.А., Исаев И.М., Прусаков А.Д.</copyright-holder><copyright-holder xml:lang="en">Kostishin V.G., Sysoev M.A., Isaev I.M., Prusakov A.D.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://www.zldm.ru/jour/article/view/2798">https://www.zldm.ru/jour/article/view/2798</self-uri><abstract><p>Анизотропные толстые пленки гексагонального феррита бария BaFe12O19 применяют при конструировании и производстве микрополосковых устройств СВЧ-электроники, устройств спинволновой электроники и магноники. Цель работы — исследование кристаллической структуры и магнитных свойств пленок BaFe12O19 разной толщины. Пленки получали методом шликерного литья. Исходный материал — ферритизированный порошок гексаферрита бария, синтезированный методом стандартной керамической технологии. В качестве пленкообразователя использовали поливинилбутираль, в качестве растворителей — этиловый спирт, бутилацетат и дибутилфталат. Соотношение порошка BaFe12O19 к пленкообразователю с растворителями составляло 70/30, толщина полученных пленок после спекания — 73, 340 и 770 мкм. Рентгеновский фазовый анализ образцов проводили с помощью автоматизированного рентгеновского дифрактометра ДРОН-4, петли магнитного гистерезиса объектов исследования регистрировали при комнатной температуре. Установлено, что основная фаза пленок — гексаферрит бария (параметры кристаллической решетки: a = 5,88 Å, c = 23,19 Å). Обнаруженная на дифрактограммах примесь, вероятно, относится к пленкообразователю и растворителю. Показано, что коэрцитивная сила синтезированных пленок составляет ~3 кЭ, остаточная удельная намагниченность — 20 – 26 эму/г, а величина степени магнитной текстуры находится в пределах 10,98 – 15,70, что говорит об анизотропии образцов. Полученные результаты могут быть использованы при производстве и совершенствовании устройств магнитоэлектроники, СВЧ-микроэлектроники, а также спинволновой электроники и магноники.</p></abstract><trans-abstract xml:lang="en"><p>Anisotropic thick films of hexagonal barium ferrite BaFe12O19 are used in the design and manufacture of microstrip microwave electronics devices, spinwave electronics devices and magnonics. The aim of the work is to study the crystal structure and magnetic properties of BaFe12O19 films of different thicknesses. The films were obtained by the method of slip casting. The starting material is ferritized barium hexaferrite powder synthesized using standard ceramic technology. Polyvinyl butyral was used as a film-forming agent, ethyl alcohol, butyl acetate and dibutyl phthalate were used as solvents. The ratio of BaFe12O19 powder to solvent film-forming agent was 70/30, and the thickness of the obtained films after sintering was 73, 340, and 770 μm. X-ray phase analysis of the samples was performed using an automated X-ray diffractometer DRON-4, the magnetic hysteresis loops of the study objects were recorded at room temperature. It is established that the main phase of the films is barium hexaferrite (crystal lattice parameters: a = 5.88 Å, c = 23.19 Å). The impurity found on the diffractograms probably refers to the film-forming agent and solvent. It is shown that the coercive force of the synthesized films is ~3 kOe, the residual specific magnetization is 20 – 26 emu/g, and the degree of magnetic texture is in the range of 10.98 – 15.7, which indicates the anisotropy of the samples. The results obtained can be used in the manufacture and improvement of devices for magnetoelectronics, microwave microelectronics, as well as spinwave electronics and magnonics.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>толстые пленки гексаферрита бария</kwd><kwd>шликерное литье</kwd><kwd>петли магнитного гистерезиса</kwd><kwd>рентгенофазовый анализ</kwd><kwd>параметр кристаллической решетки</kwd><kwd>коэрцитивная сила</kwd><kwd>остаточная удельная намагниченность</kwd><kwd>степень магнитной текстуры</kwd></kwd-group><kwd-group xml:lang="en"><kwd>thick films of barium hexaferrite</kwd><kwd>slip casting</kwd><kwd>magnetic hysteresis loops</kwd><kwd>X-ray phase analysis</kwd><kwd>crystal lattice parameter</kwd><kwd>coercive force</kwd><kwd>residual specific magnetization</kwd><kwd>degree of magnetic texture</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Работа выполнена за счет средств гранта РНФ № 24-13-00268 (тема НИР в НИТУ МИСИС № 8219305).</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Letyuk L. 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