<?xml version="1.0" encoding="UTF-8"?>
<!DOCTYPE article PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.3 20210610//EN" "JATS-journalpublishing1-3.dtd">
<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">zldm</journal-id><journal-title-group><journal-title xml:lang="ru">Заводская лаборатория. Диагностика материалов</journal-title><trans-title-group xml:lang="en"><trans-title>Industrial laboratory. Diagnostics of materials</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1028-6861</issn><issn pub-type="epub">2588-0187</issn><publisher><publisher-name>ООО «Издательство «ТЕСТ-ЗЛ»</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.26896/1028-6861-2026-92-9-92-98</article-id><article-id custom-type="elpub" pub-id-type="custom">zldm-2942</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>МЕХАНИКА МАТЕРИАЛА: ПРОЧНОСТЬ, РЕСУРС, БЕЗОПАСНОСТЬ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MATERIALS MECHANICS: STRENGTH, DURABILITY, SAFETY</subject></subj-group></article-categories><title-group><article-title>Физико-математическая модель оптимальных геометрических размеров тензометрического датчика давления на основе численного моделирования</article-title><trans-title-group xml:lang="en"><trans-title>Physical and mathematical model of optimal geometric dimensions of a strain gauge for a dual-diaphragm pressure sensor based on numerical modeling</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Гаврюшин</surname><given-names>С. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Gavriushin</surname><given-names>S. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Сергей Сергеевич Гаврюшин</p><p>101000, Москва, Малый Харитоньевский пер., д. 4</p></bio><bio xml:lang="en"><p>Sergey S. Gavriushin</p><p>4, Malyi Kharitonyevsky per., Moscow, 101990</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Скворцов</surname><given-names>П. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Skvortsov</surname><given-names>P. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Павел Аркадьевич Скворцов</p><p>101000, Москва, Малый Харитоньевский пер., д. 4</p></bio><bio xml:lang="en"><p>Pavel A. Skvortsov</p><p>4, Malyi Kharitonyevsky per., Moscow, 101990</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Рябов</surname><given-names>Н. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Riabov</surname><given-names>N. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Никита Валерьевич Рябов</p><p>107023, Москва, Большая Семёновская ул., д. 38</p></bio><bio xml:lang="en"><p>Nikita V. Riabov</p><p>38, Bolshaya Semyonovskaya ul., Moscow, 107023</p></bio><email xlink:type="simple">ryabovnv@internet.ru</email><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Институт машиноведения им. А. А. Благонравова Российской академии наук</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Mechanical Engineering Research Institute of the Russian Academy of Sciences</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Московский политехнический университет</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Moscow Polytechnic University</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2026</year></pub-date><pub-date pub-type="epub"><day>25</day><month>09</month><year>2026</year></pub-date><volume>92</volume><issue>9</issue><fpage>92</fpage><lpage>98</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Гаврюшин С.С., Скворцов П.А., Рябов Н.В., 2026</copyright-statement><copyright-year>2026</copyright-year><copyright-holder xml:lang="ru">Гаврюшин С.С., Скворцов П.А., Рябов Н.В.</copyright-holder><copyright-holder xml:lang="en">Gavriushin S.S., Skvortsov P.A., Riabov N.V.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://www.zldm.ru/jour/article/view/2942">https://www.zldm.ru/jour/article/view/2942</self-uri><abstract><p>Исследование посвящено решению актуальной научно-прикладной задачи повышения метрологических характеристик тензометрических датчиков давления, в частности — их чувствительности к измерению малых давлений. Актуальность работы обусловлена тем, что для современного приборостроения требуются миниатюрные высокоточные измерительные преобразователи. Вопрос целенаправленной оптимизации геометрии и позиционирования тензочувствительных элементов изучен недостаточно. Основная цель работы — определение оптимального сочетания размера тензодатчика и места его размещения относительно мембраны для повышения уровня выходного сигнала в области измерения малых давлений. Проведено детальное трехмерное моделирование датчика методом конечных элементов с помощью специализированного инженерного программного комплекса. Полная пространственная модель позволила с высокой достоверностью проанализировать распределение деформаций в сложной составной структуре датчика и оценить влияние вариаций геометрии. На основе обширного численного эксперимента (путем системного варьирования параметров) выявлены общие закономерности изменения механического отклика. Полученный массив данных послужил основой для построения обобщенной физико-математической модели связи между геометрией чувствительного элемента и результирующей разностью деформаций. Модель, разработанная с применением методов регрессионного анализа, имеет раздельный вид для различных зон расположения элемента, что повышает ее адекватность. Основной научный результат — разработка модели, позволяющей проводить оценку и рациональный выбор геометрической конфигурации тензопреобразователя на этапе проектирования. Практическая значимость работы заключается в формулировке конкретных рекомендаций по выбору оптимальных размеров и расположения чувствительных элементов для достижения максимального уровня выходного сигнала. Результаты представляют ценность для инженеров и исследователей, занимающихся разработкой и оптимизацией высокочувствительной измерительной аппаратуры в таких областях, как аэрокосмическая техника, энергетика, робототехника и промышленная автоматика.</p></abstract><trans-abstract xml:lang="en"><p>The study is devoted to solving an urgent scientific and applied problem of improving the metrological characteristics of strain gauge pressure sensors, in particular, their sensitivity in the field of low pressure measurement. The relevance of the work is due to the fact that in modern instrumentation there remains a need to miniaturize and improve the accuracy of measuring transducers, while the issue of purposeful optimization of the geometry and location of strain-sensitive elements often remains insufficiently studied. The main goal is to determine the optimal combination of the load cell size and its placement relative to the membrane to increase the output signal level in the field of low pressure measurement. To achieve this goal, detailed three-dimensional modeling using the finite element method was carried out in a specialized engineering software package. The use of a complete spatial model made it possible to analyze with high reliability the distribution of deformations in the complex composite structure of the sensor and to assess the influence of variations in geometry. Based on an extensive numerical experiment, by systematically varying the parameters, general patterns of changes in the mechanical response were identified. The obtained data set served as the basis for constructing a generalized physicomathematical model of the relationship between the geometry of the sensor element and the resulting strain difference. The model developed using regression analysis methods has a separate view for different zones of the element location, which increases its adequacy. The main scientific result is the developed model, which makes it possible to evaluate and rationally select the geometric configuration of the load cell at the design stage. The practical significance of the work lies in the formulation of specific recommendations for choosing the optimal proportions and location of the sensing elements to achieve the maximum output signal level. The results are of value to engineers and researchers involved in the development and optimization of highly sensitive measuring equipment in fields such as aerospace engineering, energy, robotics, and industrial automation.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>измерение давления</kwd><kwd>численное моделирование</kwd><kwd>тензодатчик</kwd><kwd>тензопреобразователь</kwd></kwd-group><kwd-group xml:lang="en"><kwd>pressure measurement</kwd><kwd>numerical modeling</kwd><kwd>strain gauge</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Dobrovinskaya E. R., Lytvynov L. A., Pishchik V. Sapphire: Material, Manufacturing, Applications. — New York: Springer, 2009. — 481 p.</mixed-citation><mixed-citation xml:lang="en">Dobrovinskaya E. R., Lytvynov L. A., Pishchik V. Sapphire: Material, Manufacturing, Applications. — New York: Springer, 2009. — 481 p.</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">Vaganov V. I. Integral strain transducers. — Moscow: Énergoatomizdat, 1983. — 136 p. [in Russian].</mixed-citation><mixed-citation xml:lang="en">Vaganov V. I. Integral strain transducers. — Moscow: Énergoatomizdat, 1983. — 136 p. [in Russian].</mixed-citation></citation-alternatives></ref><ref id="cit3"><label>3</label><citation-alternatives><mixed-citation xml:lang="ru">Das K., Himadri S. Dutta. Improved sensitivity of MEMS-based piezoresistive pressure sensor using silicon nitride diaphragm / J. Integrated Circuits Syst. 2024. Vol. 19. No. 1. P. 8. DOI: 10.29292/jics.v19i1.755</mixed-citation><mixed-citation xml:lang="en">Das K., Himadri S. Dutta. Improved sensitivity of MEMS-based piezoresistive pressure sensor using silicon nitride diaphragm / J. Integrated Circuits Syst. 2024. Vol. 19. No. 1. P. 8. DOI: 10.29292/jics.v19i1.755</mixed-citation></citation-alternatives></ref><ref id="cit4"><label>4</label><citation-alternatives><mixed-citation xml:lang="ru">Mohammadia N., Mohammadzadeha A., Taftib F. F. Design and optimization of piezoresistive mems pressure sensors using ABAQUS / Int. J. Eng. Technol. Sci. (IJETS). 2014. No. 2(6). P. 461 – 473.</mixed-citation><mixed-citation xml:lang="en">Mohammadia N., Mohammadzadeha A., Taftib F. F. Design and optimization of piezoresistive mems pressure sensors using ABAQUS / Int. J. Eng. Technol. Sci. (IJETS). 2014. No. 2(6). P. 461 – 473.</mixed-citation></citation-alternatives></ref><ref id="cit5"><label>5</label><citation-alternatives><mixed-citation xml:lang="ru">Gabbi R., Rasia L., Valdiero A., Gabbi M. Computational simulation for square diaphragms of a piezoresistive pressure sensor / IEEE Lat. Am. Trans. 2018. Vol. 16. No. 12. P. 2963 – 2969. DOI: 10.1109/tla.2018.8804263</mixed-citation><mixed-citation xml:lang="en">Gabbi R., Rasia L., Valdiero A., Gabbi M. Computational simulation for square diaphragms of a piezoresistive pressure sensor / IEEE Lat. Am. Trans. 2018. Vol. 16. No. 12. P. 2963 – 2969. DOI: 10.1109/tla.2018.8804263</mixed-citation></citation-alternatives></ref><ref id="cit6"><label>6</label><citation-alternatives><mixed-citation xml:lang="ru">Verma P., Punetha D., Pandey S. K. Sensitivity optimization of MEMS based piezoresistive pressure sensor for harsh environment / Silicon. 2020. No. 12. P. 2663 – 2671. DOI: 10.1007/s12633-019-00362-8</mixed-citation><mixed-citation xml:lang="en">Verma P., Punetha D., Pandey S. K. Sensitivity optimization of MEMS based piezoresistive pressure sensor for harsh environment / Silicon. 2020. No. 12. P. 2663 – 2671. DOI: 10.1007/s12633-019-00362-8</mixed-citation></citation-alternatives></ref><ref id="cit7"><label>7</label><citation-alternatives><mixed-citation xml:lang="ru">Kozlov A. I., Stuchebnikov V. M. Experimental determination of the distribution of deformations in a circular elastic membrane of a strain gauge / Instrumentation. 2014. No. 7. P. 41 – 44 [in Russian].</mixed-citation><mixed-citation xml:lang="en">Kozlov A. I., Stuchebnikov V. M. Experimental determination of the distribution of deformations in a circular elastic membrane of a strain gauge / Instrumentation. 2014. No. 7. P. 41 – 44 [in Russian].</mixed-citation></citation-alternatives></ref><ref id="cit8"><label>8</label><citation-alternatives><mixed-citation xml:lang="ru">Krivulin N. O., Pavlov D. A., Shilyaev P. A., et al. The effect of defects on the mechanical properties of epitaxial silicon layers on sapphire / Vestn. Nizhegorod. Univ. im. N. I. Lobachevskogo. 2012. No. 3(1). P. 30 – 33 [in Russian].</mixed-citation><mixed-citation xml:lang="en">Krivulin N. O., Pavlov D. A., Shilyaev P. A., et al. The effect of defects on the mechanical properties of epitaxial silicon layers on sapphire / Vestn. Nizhegorod. Univ. im. N. I. Lobachevskogo. 2012. No. 3(1). P. 30 – 33 [in Russian].</mixed-citation></citation-alternatives></ref><ref id="cit9"><label>9</label><citation-alternatives><mixed-citation xml:lang="ru">Alekseev A. A., Karpov I. M., Timofeev S. P. Optimization of the membrane shape of a strain gauge pressure sensor by the finite element method / Sensors and Systems. 2022. No. 5. P. 14 – 22 [in Russian].</mixed-citation><mixed-citation xml:lang="en">Alekseev A. A., Karpov I. M., Timofeev S. P. Optimization of the membrane shape of a strain gauge pressure sensor by the finite element method / Sensors and Systems. 2022. No. 5. P. 14 – 22 [in Russian].</mixed-citation></citation-alternatives></ref><ref id="cit10"><label>10</label><citation-alternatives><mixed-citation xml:lang="ru">Nag M., Singh J., Kumar A. A high sensitive graphene piezoresistive MEMS pressure sensor by integration of rod beams in silicon diaphragm for low pressure measurement application / Microsyst. Technol. 2020. Vol. 26. P. 2971 – 2976. DOI: 10.1007/s00542-020-04890-x</mixed-citation><mixed-citation xml:lang="en">Nag M., Singh J., Kumar A. A high sensitive graphene piezoresistive MEMS pressure sensor by integration of rod beams in silicon diaphragm for low pressure measurement application / Microsyst. Technol. 2020. Vol. 26. P. 2971 – 2976. DOI: 10.1007/s00542-020-04890-x</mixed-citation></citation-alternatives></ref><ref id="cit11"><label>11</label><citation-alternatives><mixed-citation xml:lang="ru">Ranjan P. Modeling and analysis of the effect of strain gradient to design diaphragm for pressure sensing application through finite element analysis / Microsyst. Technol. 2024. Vol. 30. P. 981 – 991. DOI: 10.1007/s00542-024-05643-w</mixed-citation><mixed-citation xml:lang="en">Ranjan P. Modeling and analysis of the effect of strain gradient to design diaphragm for pressure sensing application through finite element analysis / Microsyst. Technol. 2024. Vol. 30. P. 981 – 991. DOI: 10.1007/s00542-024-05643-w</mixed-citation></citation-alternatives></ref><ref id="cit12"><label>12</label><citation-alternatives><mixed-citation xml:lang="ru">Sabhapandit E., Jindal S. K., Kanekal D. Mathematical modeling and numerical simulation of a single-turn MEMS piezoresistive pressure sensor for enhancement of performance metrics / J. Circuits Systems Computers. 2023. Vol. 32. No. 16. 2350276. DOI: 10.1142/s0218126623502766</mixed-citation><mixed-citation xml:lang="en">Sabhapandit E., Jindal S. K., Kanekal D. Mathematical modeling and numerical simulation of a single-turn MEMS piezoresistive pressure sensor for enhancement of performance metrics / J. Circuits Systems Computers. 2023. Vol. 32. No. 16. 2350276. DOI: 10.1142/s0218126623502766</mixed-citation></citation-alternatives></ref><ref id="cit13"><label>13</label><citation-alternatives><mixed-citation xml:lang="ru">Li C., Zhao L., Ocana J. L., et al. Characterization and analysis of a novel structural SOI piezoresistive pressure sensor with high sensitivity and linearity / Microsyst. Technol. 2020. Vol. 26. No. 26(9). P. 2955 – 2960. DOI: 10.1007/s00542-020-04917-3</mixed-citation><mixed-citation xml:lang="en">Li C., Zhao L., Ocana J. L., et al. Characterization and analysis of a novel structural SOI piezoresistive pressure sensor with high sensitivity and linearity / Microsyst. Technol. 2020. Vol. 26. No. 26(9). P. 2955 – 2960. DOI: 10.1007/s00542-020-04917-3</mixed-citation></citation-alternatives></ref><ref id="cit14"><label>14</label><citation-alternatives><mixed-citation xml:lang="ru">Thawornsathit P., Juntasaro E., Rattanasonti H., Pengpad P. Mechanical diaphragm structure design of a MEMS-based piezoresistive pressure sensor for sensitivityand linearity enhancement / Eng. J. 2022. Vol. 26. Issue 5. P. 43 – 57. DOI: 10.4186/ej.2022.26.5.43</mixed-citation><mixed-citation xml:lang="en">Thawornsathit P., Juntasaro E., Rattanasonti H., Pengpad P. Mechanical diaphragm structure design of a MEMS-based piezoresistive pressure sensor for sensitivityand linearity enhancement / Eng. J. 2022. Vol. 26. Issue 5. P. 43 – 57. DOI: 10.4186/ej.2022.26.5.43</mixed-citation></citation-alternatives></ref><ref id="cit15"><label>15</label><citation-alternatives><mixed-citation xml:lang="ru">Gabbi R., Rasia L. A., Valdiero A. C., Tolfo Gabbi M. T. Computational simulation for square diaphragms of a piezoresistive pressure sensor / IEEE Lat. Am. Trans. 2018. Vol. 16. No. 12. P. 2963 – 2969. DOI: 10.1109/tla.2018.8804263</mixed-citation><mixed-citation xml:lang="en">Gabbi R., Rasia L. A., Valdiero A. C., Tolfo Gabbi M. T. Computational simulation for square diaphragms of a piezoresistive pressure sensor / IEEE Lat. Am. Trans. 2018. Vol. 16. No. 12. P. 2963 – 2969. DOI: 10.1109/tla.2018.8804263</mixed-citation></citation-alternatives></ref><ref id="cit16"><label>16</label><citation-alternatives><mixed-citation xml:lang="ru">Nisanth A., Suja K. J., Komaragiri R. Performance analysis of a silicon piezoresistive pressure sensor based on diaphragm geometry and piezoresistor dimensions / International Conference on Circuits, Power and Computing Technologies [ICCPCT-2014], Nagercoil, India, 2014. P. 1273 – 1278. DOI: 10.1109/iccpct.2014.7055011</mixed-citation><mixed-citation xml:lang="en">Nisanth A., Suja K. J., Komaragiri R. Performance analysis of a silicon piezoresistive pressure sensor based on diaphragm geometry and piezoresistor dimensions / International Conference on Circuits, Power and Computing Technologies [ICCPCT-2014], Nagercoil, India, 2014. P. 1273 – 1278. DOI: 10.1109/iccpct.2014.7055011</mixed-citation></citation-alternatives></ref><ref id="cit17"><label>17</label><citation-alternatives><mixed-citation xml:lang="ru">Li C., Cordovilla F., Jagdheesh R., Ocana J. L. Design and optimization of a novel structural MEMS piezoresistive pressure sensor / Microsyst. Technol. 2016. Vol. 23. P. 4531. DOI: 10.1007/s00542-016-31876</mixed-citation><mixed-citation xml:lang="en">Li C., Cordovilla F., Jagdheesh R., Ocana J. L. Design and optimization of a novel structural MEMS piezoresistive pressure sensor / Microsyst. Technol. 2016. Vol. 23. P. 4531. DOI: 10.1007/s00542-016-31876</mixed-citation></citation-alternatives></ref><ref id="cit18"><label>18</label><citation-alternatives><mixed-citation xml:lang="ru">Yildiz F., Kavuncuoglu E. Machine learning-driven predictive modeling of natural frequency and displacement in perforated diaphragms for enhanced structural analysis / J. Comput. Electron. 2025. Vol. 25. No. 27. DOI: 10.1007/s10825-025-02467-3</mixed-citation><mixed-citation xml:lang="en">Yildiz F., Kavuncuoglu E. Machine learning-driven predictive modeling of natural frequency and displacement in perforated diaphragms for enhanced structural analysis / J. Comput. Electron. 2025. Vol. 25. No. 27. DOI: 10.1007/s10825-025-02467-3</mixed-citation></citation-alternatives></ref><ref id="cit19"><label>19</label><citation-alternatives><mixed-citation xml:lang="ru">Abouzarkhanifard A., Chimeh H. E., Janaideh M. A., Zhang L. FEM-inclusive transfer learning for bistable piezoelectric MEMS energy harvester design / IEEE Sensors J. 2023. Vol. 23. No. 4. P. 3521 – 3531. DOI: 10.1109/jsen.2023.3235198</mixed-citation><mixed-citation xml:lang="en">Abouzarkhanifard A., Chimeh H. E., Janaideh M. A., Zhang L. FEM-inclusive transfer learning for bistable piezoelectric MEMS energy harvester design / IEEE Sensors J. 2023. Vol. 23. No. 4. P. 3521 – 3531. DOI: 10.1109/jsen.2023.3235198</mixed-citation></citation-alternatives></ref><ref id="cit20"><label>20</label><citation-alternatives><mixed-citation xml:lang="ru">Sulwinski R., Johnston R. Methodology for validation of finite element analysis utilizing strain gauge measurements / Conference: ASME 2023 Verification, Validation, and Uncertainty Quantification Symposium. DOI: 10.1115/vvuq2023-108749</mixed-citation><mixed-citation xml:lang="en">Sulwinski R., Johnston R. Methodology for validation of finite element analysis utilizing strain gauge measurements / Conference: ASME 2023 Verification, Validation, and Uncertainty Quantification Symposium. DOI: 10.1115/vvuq2023-108749</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
