For citations:
Schemerov I.V., Polyakov A.Ya., Lagov P.B., Kobeleva S.P., Kochkova A.I., Kulanchikov Yu.O., Doroshkevich A.S., Kirilov V.D. The effect of trapping sites introduced by 1 MeV proton irradiation on the reverse current recovery time in Ga2O3-based Schottky diodes. Industrial laboratory. Diagnostics of materials. 2023;89(7):25-33. (In Russ.) https://doi.org/10.26896/1028-6861-2023-89-7-25-33
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