The Reason for Broadening of Bragg Diffraction Peaks Obtained from the Lapped Surfaces of Single-Crystal Silicon Plates

The reason for broadening of Bragg diffraction peaks (BP) and dependence of their integral width on the diffraction angle upon diffractometric shooting of the defective layers (DL) formed on the surface of plates upon cutting of monocrystalline silicon ingots and subsequent lapping is considered. To calculate the integral width of BP we used a simplified model of DL treated as a multilayered structure in which each layer consists of randomly linearly shifted single-crystal blocks. An equation is derived that links DL parameters with integral width of BP and the width of the total reflection area. BP are obtained from the surfaces of silicon plates (polished with KZM-50 (grain size 50 μm) and fine abrasive ÉBM-10 (grain size 10 μm)) having orientation (111), (110), (100) in reflection (111), (220), (400), (333), (440) of CuKα₁ and MoKα₁-radiation on a double-crystal goniometer in the scheme (n, -n). The BP analysis showed that equation is true for DL formed on the surfaces after their polishing with coarse-grained abrasive KZM-50. The validity of the derived formula for “thick” DL indicates to the formation of BP as a sum of diffraction peaks from a lim ited number of layers composed of non-deformed single-crystal blocks divorced from each other. For thin DL formed upon the surface treatment with fine-grained abrasive ÉBM-10 the formula is not applicable due to the increasing contribution of the diffraction angle to the diffraction peak of reflection from the monocrystalline matrix ofthe silicon substrate.

полупроводниковый кремний, шлифовка, брэгговский дифракционный пик, интегральная ширина, дефектный слой, толщина блока, semiconductor-grade silicon, lapping, defective layer, Bragg peak, integral width, block thickness

1. Нашельский А. Я. Технология полупроводниковых материалов. - М.: Металлургия, 1987. - 233 c.

2. Колев Д., Мильвидский М. Г., Новиков А. Г., Соколова Н. С., Фомин В. Г. Особенности дефектообразования в монокристаллах Si и GaAs при механической обработке/ Кристаллография. 1997. Т. 42. № 1. С. 141 - 144.

3. Гинье А. Рентгенография кристаллов. - М.: Физмат., 1961. -393 c.

4. Молодкин В. Б., Низкова А. И., Олиховский С. И. и др. Определение толщины нарушенного слоя на поверхности монокристаллов методом интегральных отражательных способностей при брэгг-дифракции рентгеновских лучей / Металлофизика. Новейшие технологии. 2002. Т. 24. № 4. С. 521 -532.

5. Тейлор А. Рентгеновская металлография. - М.: Металлургия, 1965. - 62 c.

6. Боуэн Д. К., Таннер Б. К. Высокоразрешающая рентгеновская дифрактометрия и топография. - СПб.: Наука, 2002. - 85 c.

7. Джеймс Р. Оптические принципы дифракции рентгеновских лучей. - М.: Иностранная литература, 1950. - 66 c.