High Resolution X-Ray Diffractometry of Porous PbTe Layers on Silicon Substrates

Abstract

A mechanism of curve formation in high-resolution x-ray diffractometry is presented. Rule given for calculating the intensity of which is recorded by the detector. Angular positions of peaks attributed to reflection from monochromator, sample and analyzer are determined. Diffraction scattering in a reciprocal space and the principles of construction are considered. A scheme of the two-dimensional intensity distribution near a node of the reciprocal lattice of the crystal is presented along with a detailed description of the adjustment of three - axis diffraction scheme. An emphasis is made on the difference between the zero position of the diffraction pattern, the origin of the reciprocal space and node of the reciprocal lattice. Considered sequence of forming contours of equal intensity of diffuse scattering is used for determination of the morphology of the samples. The pore size and orientation in lead telluride formed upon electrolytic etching are determined. Defect formation in the samples is also evaluated both before and after etching.