Effect of the elemental composition of yttrium ferrogranate on the properties of film structures Y3Fe5O12/GaAs

Due to unique electromagnetic and magneto-optical properties, iron- yttrium garnet (Y₃Fe₅O₁₂, YIG) and its solid solutions are used in the production of film structures for a new field of spin electronics, known as magnonics. It is essential to control the chemical composition of synthesized YIG, including both primary (Fe, Y) and trace elements (Li, Be, B, Na, Mg, Al, Si, P, K, Ca, Sc, Ti, V, Cr, Mn, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Rb, Sr, Zr, Nb, Mo, Cd, Sn, Sb, Te, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Tl, Pb, Bi, Th, U), because the presence of impurities above 10^–2 wt.% significantly broadens the ferromagnetic resonance line of the films and deteriorates the properties of the film structures. It is shown that the use of two methods, atomic emission (ICP AES) and mass spectrometry with inductively coupled plasma (ICP MS), under selected conditions of analysis, allows for the accuracy of its results and a wide range of detectable elements. The peculiarities of the synthesis of YIG film structures on a gallium arsenide substrate using a novel none-epitaxial method proposed by the authors have been studied. The effect of YIG impurity composition on the structure and properties of the resulting films is shown. To prevent the interaction between Y³Fe⁵O¹² and GaAs at the interface during film crystallization, a barrier layer of aluminum oxide was pre-sprayed onto the substrate. The ferromagnetic resonance spectra of Y³Fe⁵O¹²/AlOx/GaAs films obtained by various methods have been studied. It was found that the width of the FMR line for films obtained by spraying YIG single crystals is 30 – 40 Oe less than for films contained impurity elements.

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