Synthesis of ZnO-Based Thin Films Doped with Ga/In and Determination of Their Structure Using X-Ray Spectroscopy and Inductively Coupled Plasma Mass Spectrometry

An approach to studying the composition of synthesized zinc-based thin films doped with In and Ga using local X-ray spectrometry (LXS) and inductively coupled plasma mass spectrometry (ICP-MS) is developed. The dependence ofthe content and distribution ofthe additives in a sample on conditions of synthesis on rotating substrates is derived. The results of ICP-MS determination of predominant impurities in the solutions of films are used for validation of the results obtained by LXS without sample preparation. It is shown that dopant impurities at a level of less than 1 % at. may be determined only using inductively coupled plasma mass spectrometry.

advanced materials, thin films, inductively coupled plasma mass spectrometry, X-ray spectroscopy, zinc, gallium, indium, новые материалы, тонкие пленки, масс-спектрометрия с индуктивно-связанной плазмой, рентгеновская спектроскопия, цинк, галлий, индий

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