Electrical Properties of the High-Quality Synthetic Boron-Doped Single Crystal Diamonds and Schottky Barrier Diodes on Their Base

Temperature dependencies of the resistivity and Hall coefficient in high-quality boron-doped synthetic diamond single crystals grown by HPHT method with different boron content are investigated. Acceptor concentration is varied in the range of 2 X 10¹⁵ -3 x 10¹⁷ cm³ in (001) cut plates via changing the boron content in the growth mixture in the range of 0.0004 - 0.04 at.%. Thin rectangular plates with uniform boron content and free of extended structural defects are subjected to laser cutting after x-ray topography and UV luminescence mapping. Donor and acceptor densities in each sample are calculated from the data of Hall effect and current-voltage characteristics. The concentrations correlate with the boron content in the growth mixture. The minimum donors to acceptors compensation ratio less than 1% is observed in crystals grown in the growth mixture containing 0.002 at.% boron, while any change in the boron content increases the ratio. Samples grown at aforementioned boron concentration exhibit the maximum charge carrier mobility: 2200 cm²/(V · sec) at T = 300 K and 7200 cm²/(V · sec) at T = 180 K. The phonon scattering of holes dominates over the entire temperature range 180- 800 K, and scattering on the point defects, such as neutral and ionized impurity atoms is negligible. The diamond crystals grown from a mixture containing from 0.0005 to 0.002 at.% boron exhibiting excellent quality and lattice scattering mechanism can be considered reference semiconductor materials.

полупроводниковый алмаз, электрические свойства, диод Шоттки, semiconductor diamond, electrical properties, Schottky diode

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